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d a t a sh eet product speci?cation october 1992 discrete semiconductors blf548 uhf push-pull power mos transistor
october 1992 2 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 features high power gain easy power control good thermal stability gold metallization ensures excellent reliability designed for broadband operation. description dual push-pull silicon n-channel enhancement mode vertical d-mos transistor designed for communications transmitter applications in the uhf frequency range. the transistor is encapsulated in a 4-lead, sot262a2 balanced flange envelope, with two ceramic caps. the mounting flange provides the common source connection for the transistors. pinning - sot262a2 pin description 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source pin configuration caution the device is supplied in an antistatic package. the gate-source input must be protected against static charge during transport and handling. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo discs are not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. fig.1 simplified outline and symbol. h alfpage 12 34 msb008 top view 55 mbb157 g 2 g 1 d 2 d 1 s quick reference data rf performance at t h = 25 c in a push-pull common source test circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 500 28 150 > 10 > 50
october 1992 3 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 limiting values in accordance with the absolute maximum system (iec 134). per transistor section unless otherwise speci?ed. thermal resistance symbol parameter conditions min. max. unit v ds drain-source voltage - 65 v v gs gate-source voltage - 20 v i d dc drain current - 15 a p tot total power dissipation up to t mb = 25 c; total device; both sections equally loaded - 330 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter conditions thermal resistance r th j-mb thermal resistance from junction to mounting base t mb = 25 c; p tot = 330 w; total device; both sections equally loaded 0.5 k/w r th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 k/w fig.2 dc soar. (1) current in this area may be limited by r ds(on) . (2) t mb = 25 c. total device; both sections equally loaded. handbook, halfpage 1 10 110 mra997 10 2 10 2 (1) i d (a) v ds (v) (2) fig.3 power/temperature derating curves. (1) continuous operation. (2) short-time operation during mismatch. total device; both sections equally loaded. handbook, halfpage 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 (2) (1) mra532 p tot (w) t h ( o c)
october 1992 4 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 characteristics (per section) t j = 25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 40 ma 65 -- v i dss drain-source leakage current v gs = 0; v ds = 28 v -- 0.5 ma i gss gate-source leakage current v gs = 20 v; v ds = 0 -- 1 m a v gs(th) gate-source threshold voltage i d = 160 ma; v ds = 10 v 2 - 4v g fs forward transconductance i d = 4.8 a; v ds = 10 v 2.4 3.5 - s r ds(on) drain-source on-state resistance i d = 4.8 a; v gs = 10 v - 0.25 0.3 w i dsx on-state drain current v gs = 15 v; v ds = 10 v 16 20 - a c is input capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 105 - pf c os output capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 90 - pf c rs feedback capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 25 - pf fig.4 temperature coefficient of gate-source voltage as a function of drain current, typical values per section. v ds = 10 v. handbook, halfpage 0 1 2 3 - 1 - 2 - 3 - 4 10 - 1 10 - 2 110 tc (mv/k) i d (a) mra524 fig.5 drain current as a function of gate-source voltage, typical values per section. v ds = 10 v; t j = 25 c. handbook, halfpage 0 5 10 15 20 25 0 4 8 12 16 mra529 i d (a) v gs (v)
october 1992 5 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 fig.6 drain-source on-state resistance as a function of junction temperature, typical values per section. i d = 4.8 a; v gs = 10 v. handbook, halfpage 0 0.1 0.2 0.3 0.4 0.5 0 40 80 120 mra522 r ds(on) (w) t j ( o c) fig.7 input and output capacitance as functions of drain-source voltage, typical values per section. handbook, halfpage 0 100 200 300 400 0 102030 c (pf) v ds (v) c os c is mra525 fig.8 feedback capacitance as a function of drain-source voltage, typical values per section. handbook, halfpage 0 20 40 60 80 100 0102030 v ds (v) c rs (pf) mra521
october 1992 6 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 application information for class-b operation t h = 25 c; r th mb-h = 0.15 k/w, unless otherwise speci?ed. rf performance in a common source, push-pull, class-b test circuit. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) cw, class-b 500 28 2 x 160 150 > 10 typ. 11 > 50 typ. 55 ruggedness in class-b operation the blf548 is capable of withstanding a load mismatch corresponding to vswr = 10 through all phases under the following conditions: v ds = 28 v; f = 500 mhz at rated output power. fig.9 power gain and efficiency as functions of load power, typical values. class-b operation; v ds = 28 v; i dq = 2 160 ma; f = 500 mhz; z l = 1.1 + j0.6 w (per section). handbook, halfpage 0 4 8 12 16 20 0 20 40 60 80 100 0 50 100 150 200 g p g p (db) mra527 p l (w) h d h d (%) fig.10 load power as a function of input power, typical values. class-b operation; v ds = 28 v; i dq = 2 160 ma; f = 500 mhz; z l = 1.1 + j0.6 w (per section). handbook, halfpage 0 40 80 120 160 200 0102030 mra531 p l (w) p in (w)
october 1992 7 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 list of components (see class-b test circuit) component description value dimensions catalogue no. c1, c2 multilayer ceramic chip capacitor (note 1) 22 pf c3 multilayer ceramic chip capacitor (note 1) 16 pf c4 ?lm dielectric trimmer 2 to 9 pf 2222 809 09005 c5 multilayer ceramic chip capacitor (note 2) 27 pf c6, c21, c22 ?lm dielectric trimmer 2 to 18 pf 2222 809 09006 c7, c10, c14, c15 multilayer ceramic chip capacitor (note 1) 390 pf c8, c11, c12, c17 multilayer ceramic chip capacitor 100 nf 2222 852 47104 c9 multilayer ceramic chip capacitor (note 3) 2 56 pf in series a gewidth c23 c24 50 w output 50 w input l24 l22 l23 l1 c1 l2 l3 c2 c3 l7 l6 c6 l5 l4 c5 c4 l8 c18 c21 c19 c20 l13 l18 l9 l14 l19 mbc232 dut c9 l20 l21 c22 v bias v bias r1 r2 c8 c7 r3 r4 c10 c11 r6 r5 + v d + v d c12 c13 l11 r7 l10 c14 l12 l15 c15 l16 l17 c16 c17 r8 fig.11 test circuit for class-b operation. f = 500 mhz.
october 1992 8 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. american technical ceramics (atc) capacitor, type 175b or other capacitor of the same quality. 3. american technical ceramics (atc) capacitor, type 100a or other capacitor of the same quality. 4. the striplines are on a double copper-clad printed circuit board, with ptfe fibre-glass dielectric ( e r = 2.2), thickness 0.79 mm. 5. cables l2 and l23 are soldered to striplines l1 and l22 respectively. c13, c16 electrolytic capacitor 10 m f, 63 v 2222 030 38109 c18 multilayer ceramic chip capacitor (note 2) 18 pf c19 multilayer ceramic chip capacitor (note 2) 12 pf c20 multilayer ceramic chip capacitor (note 2) 8.2 pf c23, c24 multilayer ceramic chip capacitor (note 1) 30 pf l1, l3, l22, l24 stripline (note 4) 34.5 w length 66.5 mm width 4 mm l2, l23 semi-rigid cable (note 5) 50 w length 66.5 mm width 3.6 mm l4, l5 stripline (note 4) 22.3 w length 35 mm width 7 mm l6, l7 stripline (note 4) 22.3 w length 10 mm width 7 mm l8, l9 stripline (note 4) 22.3 w length 5.5 mm width 7 mm l10, l11, l16, l17 grade 3b ferroxcube wideband rf choke 4312 020 36642 l12, l15 1 turn enamelled 1.5 mm copper wire 17 nh length 5 mm int. dia. 9 mm leads 2 5 mm l13, l14 stripline (note 4) 22.3 w length 15 mm width 7 mm l18, l19 stripline (note 4) 22.3 w length 36 mm width 7 mm l20, l21 stripline (note 4) 22.3 w length 8.5 mm width 7 mm r1, r5 0.4 w metal ?lm resistor 24.7 k w 2322 151 72473 r2, r6 10 turn potentiometer 5 k w r3, r4 0.4 w metal ?lm resistor 10.5 k w 2322 151 71053 r7, r8 1 w metal ?lm resistor 10 w 2322 151 51009 component description value dimensions catalogue no.
october 1992 9 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 fig.12 component layout for 500 mhz class-b test circuit. the circuit and components are situated on one side of the ptfe fibre-glass board, the other side being fully metallized to serve as a ground plane. connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth mbc231 - 1 r6 r2 c8 c7 l1/l2 l3 c1 c2 c3 c4 l4 l5 r4 r3 c5 c6 c9 l6 l7 c10 c11 v ds v ds c20 c21 c18 c19 l15 l9 l14 l19 l21 l20 c22 l18 c23 c24 l22/l23 l24 l12 l8 l13 c15 c17 c16 l17 r8 l16 l11 r7 l10 c13 c12 c14 handbook, full pagewidth mbc230 200 mm 70 mm strap strap strap strap strap strap strap strap rivets rivets
october 1992 10 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 fig.13 input impedance as a function of frequency (series components), typical values per section. class-b operation; v ds = 28 v; i dq = 160 ma (per section); p l = 150 w (total device). handbook, halfpage 0 1 - 1 - 2 - 3 - 4 50 150 250 350 450 550 f (mhz) z i (w) r i x i mra528 fig.14 load impedance as a function of frequency (series components), typical values per section. class-b operation; v ds = 28 v; i dq = 160 ma (per section); p l = 150 w (total device). handbook, halfpage 0 1 2 3 4 5 6 50 150 250 350 450 550 f (mhz) mra530 z l (w) r l x l fig.15 definition of mos impedance. handbook, halfpage mba379 z i z l fig.16 power gain as a function of frequency, typical values per section. class-b operation; v ds = 28 v; i dq = 160 ma (per section); p l = 150 w (total device). handbook, halfpage 0 10 15 20 25 30 50 150 250 350 450 550 5 f (mhz) g p (db) mra526
october 1992 11 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 package outline references outline version european projection issue date iec jedec eiaj sot262a2 97-06-28 0 5 10 mm scale flanged double-ended ceramic package; 2 mounting holes; 4 leads sot262a2 p a f b e d q u 1 h 1 u 2 h q c 5 12 4 3 e e 1 c a w 1 ab m b m w 3 m w 2 c unit a mm d b 5.85 5.58 0.16 0.10 21.98 21.71 11.05 10.29 10.03 20.58 20.06 9.91 9.65 5.39 4.62 c e u 2 0.25 0.51 1.02 w 3 27.94 qw 2 w 1 f 1.78 1.52 u 1 34.17 33.90 h 1 17.02 16.51 p 3.28 3.02 q 2,47 2.20 ee 1 10.27 10.05 inches 0.230 0.220 0.006 0.004 0.865 0.855 0.435 0.405 0.396 0.81 0.79 0.390 0.380 0.212 0.182 0.01 0.02 0.04 1.100 0.070 0.060 1.345 1.335 0.67 0.65 0.129 0.119 0.097 0.087 0.404 0.395 h dimensions (millimetre dimensions are derived from the original inch dimensions)
october 1992 12 philips semiconductors product speci?cation uhf push-pull power mos transistor blf548 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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